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. 2016 Apr 12;11:194. doi: 10.1186/s11671-016-1397-6

Fig. 4.

Fig. 4

Experimental (a) and simulated (b) reflection spectra of 20-μm-thick c-Si thin films with different surface texturing structures (AE) that are schematically denoted in c. c The schematic units for different light-trapping designs, with planar film and rear Ag reflector (A), planar film and rear INP and Ag reflector (B), rear INP and rear Ag reflector (C), front INP with SiNx antireflector and rear Ag reflector (D), front INP with SiNx antireflector and rear INP with Ag reflector (E), front INP with SiNx antireflector and rear INP with SiO2 separator and Ag reflector (F). Structure F is separated addressed in Fig. 6. The periodicity of INP array is 1400 nm for both sides