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. 2016 Apr 12;11:194. doi: 10.1186/s11671-016-1397-6

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© Zhou et al. 2016

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Fig. 6 — a Comparison of the photocurrent density theoretically generated for the six structures denoted in Fig. 4 (A—planar; B—rear INP; C—front INP; D—front INP and SiN_x; E—double-sided INP and SiN_x; F—double-sided INP and SiN_x andSiO₂), the Lambertian limit (red line) and the planar and ARC structure (blue line) are also shown. b Comparison of the simulated and experimental absorptance spectra of structure F, the absorptance spectra of planar and ARC structure and the Lambertian limit for 20-μm-thick c-Si are also shown