Fig. 4.

Reduction of SOC entry activity in HD GMSLNs by EVP4595. a, b Amplitude of Tg (1 μM)-induced currents in whole-cell experiments performed with (a) HD GMSLNs with (red circles) and without (black squares) EVP4593 (100 nM), or (b) WT GMSLNs with (red circles) and without (black squares) EVP4593 (100 nM). The 0 s data point corresponds to the time of Tg application. SOC amplitudes were measured at each ramp at a test potential of –80 mV. The time of EVP4593 application is shown above the plots. Each plot shows the results of one representative experiment. c Average I-V relationships for currents evoked by passive depletion of calcium stores with Tg (1 μM) in (1) HD GMSLNs after the currents reached the maximum (black line) and again after application of EVP4593 (100 nM) (red line), or (2) WT GMSLNs after the currents reached the maximum (blue line). Each trace represents the average of several experiments. d Average amplitude of SOCs in HD GMSLNs with (red) and without (black) EVP4593 (100 nM), or WT GMSLNs with (teal) and without (blue) EVP4593 (100 nM). The current amplitude for all groups was determined at a test potential of –80 mV and plotted as the mean ± SEM (n = number of single cell experiments)