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. 2016 Apr 12;110(7):1648–1660. doi: 10.1016/j.bpj.2016.03.007

Figure 3.

Figure 3

Finite-element simulation of ComX diffusion in side channels. (a) Boundary conditions of the simulation. The source of ComX is located at the circumferences of the traps (red). The main channel is modeled as a perfect sink for ComX. (b–d) Simulated steady-state concentration profiles of the ComX concentration, assuming a constant cell number of N = 50 for different geometries of the side channels. (e) Concentration profile along a polygon running through the center of the side channel shown in (c). Different colors correspond to different time points after the start of ComX production. (f) Steady-state ComX concentration profiles running along a polygon through centers of the side channels shown in (d). Different colors correspond to different numbers of pores connecting the trap to the main channel. Scale bars, 50 μm. To see this figure in color, go online.