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. 2016 Mar 28;113(15):3986–3990. doi: 10.1073/pnas.1520810113

Fig. 3.

Fig. 3.

Carrier transport properties of the FeSe EDLT under applied biases VG = 0 – +5.5 V. (A) RsT curves. (B) Enlarged image of A in the T range 0–60 K at VG = +4 – +5.5 V. Solid lines are used to determine the onset Tc. (C) External magnetic field dependence of RsT curves at VG = +5.5 V. (D) Hall coefficients (RH) at 40 K as a function of VG. (Inset) Transverse Hall resistance (Rxy) at 40 K under external magnetic fields up to 5 T to obtain RH.