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. 2016 Mar 28;113(15):3986–3990. doi: 10.1073/pnas.1520810113

Fig. 5.

Fig. 5.

XRD patterns of FeSe films dipped in DEME-TFSI. The intensity is normalized by that of STO 001 diffraction of the as-grown sample. (A) Dipped in DEME-TFSI for 6 h under a vacuum without applying a bias voltage. (B) Dipped in DEME-TFSI for 2 h under a vacuum with VG = +5 V.