Skip to main content
. 2016 Apr 22;6:24301. doi: 10.1038/srep24301

Figure 3.

Figure 3

Computed reflectance of FEG/MEG on the SiC substrate for varying the Fermi level EF (a), the carrier scattering time τ (c) and the number of graphene layers N (e). The respective differential reflectance ΔR plots are presented in (b,d,f). Arrows point in the direction of increasing EF, τand N. Gray area indicates the Reststrahlen band. The upper left inset in (a) shows the experimental geometry. The inset in (b) shows the interband threshold 2EF.