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. Author manuscript; available in PMC: 2016 Jun 21.
Published in final edited form as: Nature. 2015 Dec 21;531(7593):196–201. doi: 10.1038/nature16446

Figure 6. Voltage gating mechanism.

Figure 6

a, Side view of Cα superposition between AtTPC1 VSD2 (red) and NavAb VSD (cyan) with S1 omitted. Spheres indicate the Cα positions of critical residues for voltage-sensing. Distances are between Cα atoms of two equivalent S4 residues at the N-terminus (R1-R1), middle (R3-R3) and C-terminus (V122–V548). b and c, Luminal and cytosolic views of the superposition, respectively. d, Cartoon representation of the translational S4 movement from the resting to activated states with two gating charges transferred. Red arrows indicate the directions of the movement at N-, middle, and C-terminal parts of S4, and at S4–5 linker and C-terminus of S6. e, Cytosolic view of the superposition between AtTPC1 (red) and NavAb (cyan) excluding the VSD1s of AtTPC1 and the equivalent VSDs of NavAb. Major structural changes highlighted in circles occur at S4 and S4–S5 linker.