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. 2016 Apr 20;7:11405. doi: 10.1038/ncomms11405

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(a) Photoluminescence spectra of Ge_1−xSn_x nanowires (x=0.06 and 0.092) recorded at 7 K. Broadened photoluminescence peak is observed for alloy nanowires with x=0.06. Single emission with narrow line-width is observed for Ge_1−xSn_x nanowires with x=0.092. (b) The Arrhenius plot from 9.2% Ge_1−xSn_x nanowires in agreement with single exponential decay of photoluminescence intensity with temperature with the coefficient of determination close to unity (R²=0.986). (c) A projection (lines are only guide to eyes) of possible direct and indirect transition pathway for different Sn compositions.