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. 2016 Apr 27;6:24890. doi: 10.1038/srep24890

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(a) Photograph of a crumpled graphene strain sensor device on a VHB film. Scale bar: 100 μm. Inset at the top shows the mechanism of sensing strains in x-direction. (b) SEM images of crumpled graphene structures (i) under relaxed and (ii) stretched state in x-direction. The VHB pre-stretched strains in x- and y- directions are ~300% and ~150%, respectively before being relaxed. The re-stretched strain is ~150% in x-direction. Scale bar: 5 μm. (c) Normalized change in resistance with varying strain from 0% to 100% over three cycles. (d) Change in resistance normalized with the resistance after 1^st cycle over one thousand cycles of stretching strains.