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. 2005 Oct 1;110(5):497–510. doi: 10.6028/jres.110.078

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The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.

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Fig. 1 — Hall (R_H) and longitudinal (R_x) resistances of GaAs(7) in units of h/e² as a function of magnetic flux density B. Representative plateau numbers are labeled. The top left inset shows a schematic of the device with the probe sets labeled. R_H was measured across P3–P4. R_x was measured across P2–P6. The dc bias current is connected across IS-ID. The region enclosed by the dashed line is shown magnified in Fig. 2(a).