Table 1. Comparison between the present work and previously reported values (Wortman & Evans, 1965 ▸; Kim et al., 2001 ▸; Hopcroft et al., 2010 ▸).

All results are mostly in agreement except three cases as indicated in footnotes †, ¶ and ††.

		Young’s modulus	Shear modulus	Poisson’s ratio
Si(100)	In-plane (∥)	Present, Wortman, Kim	Present, Wortman, Kim	Present, Wortman, Kim
	Normal to plane (⊥)	Present, Hopcroft, Equation (7a)	Present, Wortman, Kim	Present, Wortman, Kim†
Si(110)	In-plane (∥)	Present, Wortman, Kim‡	Present, Wortman, Kim‡	Present, Wortman, Kim‡
	Normal to plane (⊥)	Present, Hopcroft, Equation (7b)	Present, Wortman, Kim‡	Present, Wortman, Kim‡
Si(111)	In-plane (∥)	Present, Wortman, Kim§	Present, Wortman, Kim§	Present, Kim, Wortman¶
	Normal to plane (⊥)	Present, Hopcroft, Equation (7c)	Present, Kim, Wortman††	Present, Wortman, Kim§

^†Poisson’s ratio ν₁₂ for fixed in the direction [100] and varying in the (100) plane, but ν₂₁ is presented in Kim instead of ν₁₂.

^‡Variation of direction (angle α) in plane: Kim from [0 0 1] to [−1 1 0], Present and Wortman from [0 0 1] to [1 −1 0].

^§Variation of direction (angle α) in plane: Kim from [1 −1 0] to [−1 −1 2], Present from [0 1 −1 ] to [2 −1 −1].

^¶Poisson’s ratio ν_∥ in Si(111) plane: Present = Kim = 0.262, Wortman = 0.358.

^††Shear modulus G _⊥ normal to plane for Si(111): Present = Kim = 57.8 GPa, Wortman = 47.0 GPa.