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. Author manuscript; available in PMC: 2017 Jan 13.
Published in final edited form as: Chem Rev. 2015 Dec 21;116(1):215–257. doi: 10.1021/acs.chemrev.5b00608

Figure 12.

Figure 12

(a) Conductance, G, vs Vg for a p-type SiNW FET. Inset: scheme for electrolyte gating. (b) Real time pH sensing. The device in the subthreshold regime shows much larger ΔG/G change versus pH. Reprinted with permission from Ref. 422. Copyright 2010 American Chemical Society.