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. 2016 Apr 7;16(5):3005–3013. doi: 10.1021/acs.nanolett.5b05216

Figure 4.

Figure 4

IV characteristics of (a) graphene-integrated and (b) reference M–Si PDs for different optical powers coupled to the Schottky region. Measured photocurrent in (c) graphene-integrated and (d) reference M–Si PDs as a function of optical power coupled to the Schottky region. The slope of the lines in (c,d) corresponds to Rph.