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. 2016 May 17;6:26121. doi: 10.1038/srep26121

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(a) Transfer characteristics (green: log scale, red: linear scale) and g_m vs. V_G (blue) of the printed top-gate CNT-TFTs (L = 350 μm and W = 200 μm). (b) Output characteristics with various V_G values ranging from −8 to 3 V. (c) Transfer characteristics with two semiconducting enriched nanotube solutions (90% and 99.9%) and various deposition times. (d) Transfer characteristics for several pV3D3 gate dielectric thicknesses (inset). The values of I_ON value were extracted from the transfer characteristics for each condition.