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. 2016 May 17;6:26099. doi: 10.1038/srep26099

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Copyright © 2016, Macmillan Publishers Limited

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SIA clusters were produced in the form of dislocation loops, and they were grown within tungsten with high-energy electron irradiation (acceleration voltage: 2000 kV, beam flux: 3.0 × 10²² m⁻²s⁻¹, temperature: 16 K, thickness: 48 nm). (a) TEM images showing the formation process of the loops. Temporal variation in (b) the average size (diameter) and (c) the number density of TEM-visible loops larger than 3 nm in diameter, taken from the TEM images as shown in panel a.