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. 2016 May 17;6:26040. doi: 10.1038/srep26040

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Inline graphic — (a) XRD 2θ/ω scan of AlN film grown on patterned 6H-SiC by ELOG, which indicates that 0002 and 101 diffraction peaks coexist in the film. (b) TEM cross sectional image of AlN film. (c,d) are SAED pattern and HRTEM image taken from the left interface. (e,f) are SAED pattern and HRTEM image taken from the right interface. Both interfaces are () incoherent twin boundaries.

(a) XRD 2θ/ω scan of AlN film grown on patterned 6H-SiC by ELOG, which indicates that 0002 and 101 diffraction peaks coexist in the film. (b) TEM cross sectional image of AlN film. (c,d) are SAED pattern and HRTEM image taken from the left interface. (e,f) are SAED pattern and HRTEM image taken from the right interface. Both interfaces are () incoherent twin boundaries.