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. 2016 May 23;7:11711. doi: 10.1038/ncomms11711

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(a) Centrosymmetric bulk crystal structure (side view) of 2H-NbSe₂. This is formed by stacking non-centrosymmetric layers of D_3h symmetry with 180° relative rotations, restoring the bulk inversion centre. (b) Resistivity measurements show clear signatures of charge-density wave formation at T_CDW≈33 K and superconductivity at T_c≈7 K (magnified in the insets). (c) Normal-state Fermi surface measured by ARPES with hν=100 eV (left-hand-side) and hν=106 eV (right-hand-side); E_F±20 meV. This consists of two Nb-derived barrels centred around the zone-corner points, two Nb-derived barrels at the Brillouin zone centre and an additional central diffuse pocket (most visible at hν=106 eV) predominantly derived from Se p_z orbitals.

Inline graphic — (a) Centrosymmetric bulk crystal structure (side view) of 2H-NbSe₂. This is formed by stacking non-centrosymmetric layers of D_3h symmetry with 180° relative rotations, restoring the bulk inversion centre. (b) Resistivity measurements show clear signatures of charge-density wave formation at T_CDW≈33 K and superconductivity at T_c≈7 K (magnified in the insets). (c) Normal-state Fermi surface measured by ARPES with hν=100 eV (left-hand-side) and hν=106 eV (right-hand-side); E_F±20 meV. This consists of two Nb-derived barrels centred around the zone-corner points, two Nb-derived barrels at the Brillouin zone centre and an additional central diffuse pocket (most visible at hν=106 eV) predominantly derived from Se p_z orbitals.