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. 2016 May 12;16(5):688. doi: 10.3390/s16050688
ACC accumulated
CCD charge collection efficiency
CTE charge transfer efficiency
E photon energy (eV)
F Fano factor
FN Fano noise (rms carriers)
non ACC not accumulated
PPD pinned photo diode
PT photo transfer
QE quantum efficiency
RTN random telegraph noise
S/N signal to noise
SF source follower
SN sense node
TG transfer gate
τD aCDS dominant time constant
ts clamp to sample time