†6 |
Specimens of Ag and Al (99.999 % pure), and of dilute alloys of each metal, were torsionally deformed at 77 K. The electrical resistivities ρ0 after isochronal annealing were measured at 4.2 K. In silver annealing stages were observed at 110 K and 230 K to 250 K. The lower-temperature stage is interpreted as being due to migration of interstitial clusters or vacancy-type defects near dislocations, and the higher-temperature stage, to long-range migration of vacancies and dissociation of vacancy clusters. The elastic modulus changes at 110 K and 240 K. |