Table 1.

Simulation parameters and values

Parameter	Definition	Value (reference)
Hc	Cut-off length for formation	40 nm (Chang et al. 2000)
ρf	Plasma density	1.03 g/cm3 (Skalak and Chien 1987)
ν	Plasma kinetic viscosity	1.2 × 10−6 m2/s (Skalak and Chien 1987)
T	Temperature	310 K (Chang and Hammer 1996)
λ	Equilibrium bond length	20 nm (Chang and Hammer 1996)
kb	Boltzmann constant	1.38 × 10−23 J/K
σ	Spring constant	2 × 10−3 N/m (Chang and Hammer 1996)
$k_{\mathrm{f}}^n$	Normal association rate	84 s−1 (Chang et al. 2000)
$k_{\mathrm{r}}^0$	Unstressed dissociation rate	200 s−1 (Chang et al. 2000)
γ	Reactive compliance	0.75Å (Bell 1978)
Nr	Receptor density	47/μm2 (Chang and Hammer 1996)
Nl	Ligand density	1,000/μm2 (Lomakina and Waugh 2004)
k1	Sensitivity of wall shear stress to association rate	1.0
k2	Sensitivity of wall shear stress to dissociation rate	−5.0
k3	Sensitivity of wall shear stress gradient to association rate	1.0 μm/Pa
k4	Sensitivity of wall shear stress gradient to dissociation rate	−50.0 μm/Pa