Table 1. Optoelectronic properties of O-IDTBR and EH-IDTBR acceptors.

	ɛ (104 M−1 cm−1)*	λmax solution (nm)*	λmax film (nm)†	λmax ann. (nm)‡	Eg opt. (eV)†	EA (eV)§	IP (eV)||
O-IDTBR	9.9±0.1	650	690	731	1.63±0.1	3.88±0.05	5.51±0.05
EH-IDTBR	10.3±0.1	650	673	675	1.68±0.1	3.90±0.05	5.58±0.05

EA, electron affinity; IP, ionization potential.

Measurements were carried out in:

^*CHCl₃ solution.

^†Thin film spin-coated from 10 mg ml⁻¹ chlorobenzene solution.

^‡Thin film annealed at 130 °C for 10 min.

^§Cyclic voltammetry carried out on the as-cast thin film with 0.1 M TBAPF₆ electrolyte in acetonitrile.

^||Estimated from the electrochemical EA and the optical E_g.