Figure 3. Dependence on writing field and robustness against field perturbations.

(a) Temperature and writing field-strength dependence of the AMR amplitude for the temperature down-sweep with the writing field kept on. (b) Temperature and writing field-strength dependence of the zero-field AMR amplitude for the temperature up-sweep. (c) Zero-field AMR amplitudes for the temperature up-sweep after exposing the memory at 5 K to 1 T (green) and 2 T (red) perturbing fields rotated both in-plane and out-of-plane. The blue curve represents the unperturbed reference measurement. A field-cooling strength of B_FC=2 T was used in all three cases. (d) Same as c for the field perturbations applied at 200 K. (e) The stability of two memory states set by the heat-assisted magneto-recording from 350 K with a 2 T writing field applied at angles _,FC=±45° tested at 5 K by a rotating 1 T field. At every angle, of the perturbing 1 T field, magenta/turquoise curves correspond to the read-out resistance measurements with the field on, while black lines are obtained after removing the perturbing field at each .