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. 2016 Jun 17;6:28313. doi: 10.1038/srep28313

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(a) The DOS of each film. For the BLCT and BLFCT cases, cases A and B are shown. The bandgap is governed by the highest occupied O-p and lowest unoccupied transition metal d levels. (b) Magnification of the DOS near the Fermi level. The lowest unoccupied states are determined mostly by doped Co- and Fe-d states. (c) The effect of doping on the overall electronic levels. The bandgap is due to the d-levels of the doped transition metal ions.