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. 2016 Jun 17;7:11954. doi: 10.1038/ncomms11954

Figure 4. Visible/near-infrared phototransistor characteristics.

Figure 4

(a) Responsivity and EQE of the visible/near-infrared phototransistor as function of applied VTD. Blue line is a guide to the eye. (b) Normalized photoresponse as a function of light modulation frequency for VTD values specified in the legend. Light modulation frequency swept in the 250–3,000 Hz range. Inset: extracted 3 dB bandwidth values as a function of applied VTD and used for EQE calculations. (c) Photo-induced signal as a function of incident irradiance. Lowest detectable irradiance of 10−5 W m−2 was measured at VTD=1.2 V. The linear dynamic range of the detector increases with increasing VTD reaching over 110 dB at the optimal VTD. Selected VTD values are shown in the legend. Inset demonstrates the linearity of photoresponse for high irradiance values. (d) Measured responsivity of the detector in V W−1 (left axis) and responsivity converted in A W−1 (right axis, see Methods) as a function of incident irradiance. Selected VTD values are shown in the legend. The Illumination wavelength is 635 nm.