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. 2015 Aug 7;6:7812. doi: 10.1038/ncomms8812

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(a) Schematic of the p-hyper-FET consisting of a series combination of scaled VO₂ (=200 nm) and multi-channel (=200 fins) p-type Ge quantum-well FinFET (L_g=5,000 nm). (b) Transfer characteristics (I_SD–V_GS) of the hyper-FET and the FinFET (stand-alone). (c) The p-hyper-FET shows a ∼60 % higher ON-state current (I_SD,ON) in comparison to the stand-alone FinFET over a gate-voltage window of −0.5 V at matched OFF-state current. (d) Output characteristics (I_SD–V_DS) of the p-hyper-FET and the conventional FinFET.

Inline graphic — (a) Schematic of the p-hyper-FET consisting of a series combination of scaled VO₂ (=200 nm) and multi-channel (=200 fins) p-type Ge quantum-well FinFET (L_g=5,000 nm). (b) Transfer characteristics (I_SD–V_GS) of the hyper-FET and the FinFET (stand-alone). (c) The p-hyper-FET shows a ∼60 % higher ON-state current (I_SD,ON) in comparison to the stand-alone FinFET over a gate-voltage window of −0.5 V at matched OFF-state current. (d) Output characteristics (I_SD–V_DS) of the p-hyper-FET and the conventional FinFET.