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. 2015 Aug 10;6:7885. doi: 10.1038/ncomms8885

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(a) Typical I–V characteristics of the AlGaN/GaN HFET deflection transducer for microcantilever 1. Inset shows the threshold voltage of −3.1 V for the device in the I_DS–V_GS plot (measured for a V_DS=0.5 V). (b) C–V profile of HFET transducer, which was processed to obtain the 2DEG density variation with gate bias (measured for a V_DS=0.5 V).