Table 1. The parameters of SnS₂ for the device simulation.

Parameter	Value
Band gap	2.24 eV (ref. 28)
Dielectric constant	9 (ref. 29)
Electron affinity	7.30 eV (ref. 28)
Effective mass of electron	0.545 m0 (ref. 30)
Doping density of SnS2	1012 cm−3
Interface trap density	1012 cm−2
Energy level of interface trap	0.1 eV from cond. band
Electron mobility	22.5 cm2 V−1 s−1 (ref. 31)