Mathematical description of transporter activities. (A) Voltage dependence of the background conductance Ibackground = IBG = IBGmax× (1 − exp[−(V − V0) × F/(RT)])/(1 + exp[−(V − V0) × F/(RT)]); here V0 = −100 mV (black curves) or V0 = −50 mV (gray curve); IBGmax = 20 fA/μm2 (solid lines), IBGmax = 10 fA/μm2 (dotted line). (B,C) Voltage dependencies of the (B) H/P and (C) H/C cotransporters were approximated by first-order Taylor approximation. (B) IH/P = GH/P× (V − RT/F × [2 × ln(Hapo/Hcyt) + ln(Papo/Pcyt)]); GH/P = 200 fA/(μm2× V) (solid line), GH/P = 400 fA/(μm2× V) (dashed line), GH/P = 100 fA/(μm2× V) (dotted line). Pcyt = 2 mM, Papo = 10 μM, pHcyt = 7.0, pHapo = 6.0, i.e. EH/P = −17.3 mV. (C) IH/C = 200 fA/(μm2× V) × (V − RT/F × [ln(Hapo/Hcyt) + ln(Capo/Ccyt)]); Ccyt = 2 mM (solid lines), Ccyt = 4 mM (dashed line), Ccyt = 1 mM (dotted line), Capo = 10 μM (black lines) or Capo = 2 mM (gray line). The basic settings of the transporter network were: = 1.5 mM, = 3.0 mM, = 2 mM, = 1 mM, pHapo = 6.0, p = 7.0, p = 7.0, = 200 fA/(μm2 × V), = 200 fA/(μm2 × V), = 200 fA/(μm2 × V), = 200 fA/(μm2 × V), = 20 fA/μm2, = 20 fA/μm2, = = −75 mV, = = −75 mV. The free-running parameters in in silico simulations were the apoplastic concentrations Papo and Capo, and the voltages at the plant and fungal plasma membrane Vp, Vf.