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. 2016 Jun 27;6:28515. doi: 10.1038/srep28515

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(a) The device structure of a monolayer phosphorene TFET. The channel is oriented along the armchair direction. (b) The transfer characteristics (I_ds − V_gs) and (c) the gate capacitance voltage (C_g − V_gs) characteristics of bilayer-phosphornene (2L-phosphorene), monolayer WSe₂ and monolayer WTe₂ TFETs for L_ch of 15 nm and V_ds of 0.5 V. Phosphorene TFET has 7.5 times higher I_ON, 4.9 times lower capacitance and 176 times lower intrinsic energy-delay product than WTe₂.