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. 2016 Jun 27;6:28515. doi: 10.1038/srep28515

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Copyright © 2016, Macmillan Publishers Limited

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(a) The transfer characteristics of the mono- (1L), bi- (2L), and tri-layer(3L) phosphorene TFETs for 15 nm channel length L_ch. Transfer characteristics of constant electric field E scaling (i.e. 30 V/nm) for (b) 1L, (c) 2L, and (d) 3L phosphorene. For the L_ch = 6 nm case, the I_ds − V_gs can be optimized through asymmetric doping.

Inline graphic — (a) The transfer characteristics of the mono- (1L), bi- (2L), and tri-layer(3L) phosphorene TFETs for 15 nm channel length L_ch. Transfer characteristics of constant electric field E scaling (i.e. 30 V/nm) for (b) 1L, (c) 2L, and (d) 3L phosphorene. For the L_ch = 6 nm case, the I_ds − V_gs can be optimized through asymmetric doping.