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. 2016 Jun 28;6:28499. doi: 10.1038/srep28499

Figure 1.

Figure 1

(a) SEM images of SiC resistors released from the Si substrate using a MEMS photolithography process; (b) The IV curve of a SiC resistor measured at low applied voltage to avoid the effect of Joule heating; (c) Measurement of the current leakage through the SiC/Si junction when the SiC/Si strip was uniformly heated at high temperatures up to 200 °C.