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. 2016 Jun 28;6:28499. doi: 10.1038/srep28499

Figure 5.

Figure 5

(a) Simulation of the Joule heating effect on released SiC resistor using Comsol Multiphysics; (b) The relationship between the resistance of p-type 3C-SiC resistor and the heating power at the steady state, using the current mode and voltage mode. The decrease in SiC resistance at high applied power indicates that the Joule heating effect has significantly raised the temperature of SiC resistance; (c) Temperature at SiC resistor calibrated from Fig. 4. The non-linearity between the applied power and temperature is considered due to thermal radiation in nano structures at high temperatures46.