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Photovoltaic characteristics of Si/PEDOT:PSS heterojunction device with or without a SiNx:H layer
| V oc (V) | J sc (mA/cm2) | FF (%) | PCE (%) | R s (Ωcm2) | Rsh (Ωcm2) | |
|---|---|---|---|---|---|---|
| W/O SiNx:H | 0.523 ± 0.011 | 24.0 ± 0.18 | 67.78 ± 0.27 | 8.40 ± 0.21 | 7.95 ± 0.42 | 2570.80 ± 5.78 |
| W/ SiNx:H | 0.557 ± 0.014 | 24.8 ± 0.22 | 65.24 ± 0.22 | 9.02 ± 0.15 | 10.39 ± 0.40 | 5544.18 ± 4.69 |
Note: Values were obtained by averaging five devices with a calculated confidence interval of 95 %
