Fig. 6.
NDP depth profiles for a 70 keV 10B implant to a dose of 1 × 1016 in an Si wafer that had a 0.2 µm film of thermally grown SiO2 (a) as deposited, and (b) after a 30 min anneal at 1000°C.
NDP depth profiles for a 70 keV 10B implant to a dose of 1 × 1016 in an Si wafer that had a 0.2 µm film of thermally grown SiO2 (a) as deposited, and (b) after a 30 min anneal at 1000°C.