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. 1993 Jan-Feb;98(1):109–126. doi: 10.6028/jres.098.008

Fig. 6.

Fig. 6

NDP depth profiles for a 70 keV 10B implant to a dose of 1 × 1016 in an Si wafer that had a 0.2 µm film of thermally grown SiO2 (a) as deposited, and (b) after a 30 min anneal at 1000°C.