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. 2016 Jun 30;6:29016. doi: 10.1038/srep29016

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Copyright © 2016, Macmillan Publishers Limited

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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(a) Current-voltage characteristics of fabricated heterojunction, using ~2 nm MoS₂ quantum dots on Si, under dark and illumination condition. The inset shows the schematic structure of the heterojunction device. (b) J–V characteristics of fabricated p-n heterojunctions under dark condition, at room temperature. The inset shows the logarithmic J–V curve for the heterojunction fitted with a power law J ∝V^m corresponding to the trap-charge-limited current transport.