Figure 7.

(a) Optical modulation characteristics of the fabricated MoS₂/Si heterojunction device (using ~2 nm QDs) upon pulsed illumination (514 nm) for variable input intensity at room temperature. (b) Size dependent spectral responsivity of the fabricated heterojunction for different MoS₂ QD size, recorded at a bias of −2 V and optical power of 50 μW. (c) Bias dependent response of the device fabricated using QDs of average size ~2 nm. (d) Detectivity in the broadband spectral range of fabricated photodetectors of QD size ~2 nm for different bias.