Table 1. The mobilities (μ), threshold voltages (V_Th), on/off ratios (I_on/I_off), I_off, and subthreshold slop (S) for as-prepared BGBC FET devices.

	DPPTTT*	DPPTTT/NMe4I *†
		7.5	15	30	45
μ‡ (cm2 V−1 s−1)	0.8 (2.1)	8.1 (12.9)	15.4 (20.1)	19.5 (26.2)	13.6 (17.3)
μ§ (cm2 V−1 s−1)	0.6 (0.8)	1.6 (2.2)	2.8 (3.8)	3.6 (4.4)	2.4 (3.5)
VTh (V)	−4 to 2	−1 to 2	−3 to 1	−3 to 1	−3 to 2
Ion/Ioff (log10)	6–7	3–4	5–6	6–7	6–7
Ioff (A) (average)	5.5 × 10−10	8.5 × 10−7	5.4 × 10−8	6.1 × 10−9	2.5 × 10−9
S (V decade−1)	3–3.2	0.9–1.1	1.0–1.4	1.0–1.2	1.0–1.3

*All data were obtained in air based on more than 50 FET devices with W = 8800 μm and L = 80 μm at V_DS = −60 V.

†Molar ratio of the repeat moiety of DPPTTT versus NMe4I.

‡Hole mobility, extracted by fitting the linear part of the plot of I_DS^1/2 versus V_GS, in the form of average (high).

§Hole mobility, on the basis of two points of the plot of I_DS^1/2 versus V_GS at V_Th and V_GS = −30 V using the equation I_DS = C_iμ(V_GS − V_Th)²W/2L (see text), in the form of average (high).