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. 2016 Jul 1;6:28472. doi: 10.1038/srep28472

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Copyright © 2016, Macmillan Publishers Limited

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(a) TM emitter emissivity (color plot) and dispersion of system modes (dotted white lines); dashed green line is the semiconductor-material radiation cone. (b) Loss rates of the two system modes. Note the ‘kink’ in one mode loss-rate due to the onset of semiconductor inter-band absorption. (c) TM emitter emissivity (red line) and emitter-bandgap transmissivity (green line) integrated over k_xy. (d) TM emitter power P_e(ω) (red line) and load power P_l(ω) (green line) densities at the optimal-efficiency load voltage. (e) Proposed TPV structure of a plasmonic emitter and a silver-backed semiconductor thin-film absorber. The semiconductor ε_a includes free carriers to model the front electrode. The coupled emitter-SPP and absorber-waveguide modal energy profiles are shown qualitatively.

Inline graphic — (a) TM emitter emissivity (color plot) and dispersion of system modes (dotted white lines); dashed green line is the semiconductor-material radiation cone. (b) Loss rates of the two system modes. Note the ‘kink’ in one mode loss-rate due to the onset of semiconductor inter-band absorption. (c) TM emitter emissivity (red line) and emitter-bandgap transmissivity (green line) integrated over k_xy. (d) TM emitter power P_e(ω) (red line) and load power P_l(ω) (green line) densities at the optimal-efficiency load voltage. (e) Proposed TPV structure of a plasmonic emitter and a silver-backed semiconductor thin-film absorber. The semiconductor ε_a includes free carriers to model the front electrode. The coupled emitter-SPP and absorber-waveguide modal energy profiles are shown qualitatively.