. 2016 Jul 12;5:e15155. doi: 10.7554/eLife.15155

Table 2.

Fitting parameters for the gap-derived strand memory experiment with MutSα mutants

DOI: http://dx.doi.org/10.7554/eLife.15155.029

	%gap [95% Confidence Interval]			%A→G repair [95% Confidence Interval]
	t_1/2 (min)	%gap at 0 min	R²	t_1/2 (min)	%repair at 0 min	R²
+buffer	1.44 [0.51−0.73]	100 [95.2−104.7]	0.99	2.94 [2.32−3.98]	75.7 [69.2−82.2]	0.97
+xMutSα^WT	1.35 [0.58−0.81]	100 [95.1−104.9]	0.99	25.5 [17.6−46.1]	84.8 [80.5−89.2]	0.98
+xMutSα^PIP	1.48 [1.18−2.00]	100 [95.4−104.6]	0.99	12.5 [10.9−14.7]	81.9 [78.5−85.4]	0.99
+xMutSα^ΔN	1.43 [1.14−1.93]	100 [95.6−104.4]	0.99	12.3 [11.3−13.6]	81.9 [79.8−84.0]	1.00

Parameters for the one-phase exponential decay fitting of the data described in Figure 9B and D are presented. %gap: percentage of remaining gaps (100 - %closed), t_1/2: half-life, R²: coefficient of determination. n = 3.