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. 2016 Jul 20;6:30084. doi: 10.1038/srep30084

Figure 3. Ids in the on-state (Vg = 40 V and Vds = 0.1 V) measured under dry oxygen with varying values of pressure.

Figure 3

The decrease in Ids with increasing O2 pressure is explained in terms of enhanced carrier scattering due to the oxygen molecules adsorbed on the MoS2 channel surface.