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. 2016 Jul 28;6:30759. doi: 10.1038/srep30759

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Copyright © 2016, The Author(s)

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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(a) J-V characteristics of the best performing photovoltaic cell, fabricated using 45-nm-thick NiO hole transport layer, according to the scan direction (Forward: J_sc = 20.2 mA·cm⁻², V_oc = 1.04 V, FF = 0.74, PCE = 15.4%, Reverse: J_sc = 20.1 mA·cm⁻², V_oc = 1.04 V, FF = 0.73, PCE = 15.4%) and (b) its incident-photon-to-electron conversion efficiency (external quantum efficiency).