Figure 4. Closed symbols: temperature dependencies of the effective time constant of DA (τ) and the DA efficiency (ξ) for 4H-SiC bombarded with 500 keV Ar ions with F_on = 1.7 × 10¹³ cm⁻² s⁻¹ and t_on = 1 ms.

Open symbols show data points for 3C-SiC irradiated at 100 °C with 500 keV Ar ions with F_on = 1.9 × 10¹³ cm⁻² s⁻¹ and t_on = 1 ms, taken from ref. 11.