Figure 5. Selective directed self-assembly of simultaneous coexisting morphologies.

Images have an overlay of the local morphology spacing (Δx, blue line), across the grating pitch (computed using image analysis). By properly selecting line pitch and width, we can arbitrarily pattern regions with either dots or lines. The chemical patterns used in a and b have identical alternating regions of pitch=50 and 46 nm. The dose of each region has been independently selected such that the resulting oxide stripe width in the chemical pattern forces either dot or line patterns. In c and d, we see that selective DSA can generate alternating morphologies down to single columns of lines and dots in close proximity. Alternately, tuning the chemical prepattern can force the BCP blend to form a single column of dots in a field of lines (e) or line in a field of well-ordered dots (f).