Table 2. Electrophysiological properties of astrocytes plated on PDL and HTlc 1.2.
Electrophysiological properties | Vmem (mV) | Cp (pF) | I R (MΩ) | spG (nS/pF) | I −120mV (pA/pF) | I 60mV (pA/pF) |
---|---|---|---|---|---|---|
PDL | −36 ± 3 | 48 ± 6 | 726 ± 94 | 0.04 ± 0.01 | −3.6 ± 0.6 | 44 ± 5.1 |
HTlc | −70 ± 1** | 61 ± 6 | 55 ± 16** | 0.58 ± 0.1** | −27 ± 4** | 75 ± 10.5* |
Mean values of electrophysiological membrane properties of astrocytes grown on PDL (n = 16) and HTlc (n = 20). Vmem: resting membrane potential; Cp:membrane capacitance; IR: input resistance; spG: specific conductance; I−120mV: inward current density; I60mV: outward current density. *p < 0.05 **p < 0.01 (Student’s t-test).