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. 2016 Aug 9;6:31226. doi: 10.1038/srep31226

Table 2. Electrophysiological properties of astrocytes plated on PDL and HTlc 1.2.

Electrophysiological properties Vmem (mV) Cp (pF) I R (MΩ) spG (nS/pF) I −120mV (pA/pF) I 60mV (pA/pF)
PDL −36 ± 3 48 ± 6 726 ± 94 0.04 ± 0.01 −3.6 ± 0.6 44 ± 5.1
HTlc −70 ± 1** 61 ± 6 55 ± 16** 0.58 ± 0.1** −27 ± 4** 75 ± 10.5*

Mean values of electrophysiological membrane properties of astrocytes grown on PDL (n = 16) and HTlc (n = 20). Vmem: resting membrane potential; Cp:membrane capacitance; IR: input resistance; spG: specific conductance; I−120mV: inward current density; I60mV: outward current density. *p < 0.05 **p < 0.01 (Student’s t-test).