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. 2016 Aug 5;7:12373. doi: 10.1038/ncomms12373

Figure 2. Resistive switching of VHN-based device.

Figure 2

(a) Schematic of the measurement configuration of SDC:SrTiO3 (STO) VHN device. (b) Electroforming-free RV hysteresis loops in SDC:STO VHN device. (c) Uniform resistance variation with repeated electrical cycles. (d) The retention characteristics of both resistance states.