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. 2016 Aug 5;7:12373. doi: 10.1038/ncomms12373

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Copyright © 2016, The Author(s)

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Resistance variation with repeated electrical cycles (with applied voltages of −5 and +5 V for switching and a read voltage of −0.3 V) of CeO₂:SrTiO₃ VHN film devices with different dopant (Sm³⁺) concentrations in CeO₂: (a) 0 at.% Sm. (b) 10 at.% Sm. (c) 20 at.% Sm. (d) 30 at.% Sm. (e) Resistance values in LRS as a function of dopant concentrations (closed circles). Error bars are provided as s.d. We include the ionic conductivity (σ_ionic) values for the films with different dopant concentrations reported in the literature¹⁵ (open squares).