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. 2016 Jul 11;113(32):8975–8980. doi: 10.1073/pnas.1603431113

Table S1.

Candidate binomial survival models and resultant DIC differences relative to the best model (i.e., model K)

Model Missing parameters Formulation (Si,j) ΔDIC
A Linear senescence Si,t=β0+β1t2β2,x,s(eβ3,x,sΔTi,t)+ui 479.75
B Quadratic senescence Si,t=β0+β1tβ2,x,s(eβ3,x,sΔTi,t)+ui 27.33
C Replicate Si,t=β0+β1t2β2,x,s(eβ3,x,sΔTi,t) 485.12
D Quadratic senescence and replicate Si,t=β0+β1tβ2,x,s(eβ3,x,sΔTi,t) 314.62
E Linear senescence and delayed effect Si,t=β0+β1t2β2,x,s+ui 863.56
F Linear senescence, delayed effect and replicate Si,t=β0+β1t2β2,x,s 1117.6
G Quadratic senescence and delayed effect Si,t=β0+β1tβ2,x,s+ui 535.75
H Quadratic senescence, delayed effect and replicate Si,t=β0+β1tβ2,x,s 883.83
I Senescence and replicate Si,t=β0β2,x,s(eβ3,x,sΔTi,t) 639.25
J Senescence Si,t=β0β2,x,s(eβ3,x,sΔTi,t)+ui 477.45
K Full model Si,t=β0+β1t+β2t2β3,x,s(eβ4,x,sΔTi,t)+ui 0