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. 2016 Aug 19;12(8):e1005000. doi: 10.1371/journal.pcbi.1005000

Fig 3. aEIF model fitting procedure to Purkinje cell experimental data.

Fig 3

A. Double somatic whole-cell patch-clamp recording from a representative Purkinje cell: one electrode for current injection and one for voltage recording (scale bar, 100 μ m). B. Traces of injected noise current Iin(t), recorded membrane potential Vm(t), in a spontaneously active PC, calculated membrane current Im(t), and calculated spike-dependent adaptation current wsp(t). C. Im vs. Vm and dynamic IV curve as the average over Vm. Error bars indicate SEM. Inset, the distribution of data points at Vm = -52 mV is Gaussian. D. Fitting the dynamic IV curve F(V) = −Idyn/C with the EIF model function. Parameters are: resting potential Em, membrane time constant τm, threshold potential VT, and spike slope factor ΔT. Error bars indicate SD. Inset, capacitance determination by minimizing the variance of Im. E. Spike triggered adaptation wsp(t) plotted versus time after the last spike. Error bars indicate SEM. Inset, the distribution of data points at t = 12 ms is Gaussian. F. The spike-triggered adaptation is fitted to a single exponential, with time constant τw and wsp (t = 0) = b. Error bars indicate SD.