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. 2016 Sep 2;6:32614. doi: 10.1038/srep32614

Figure 4. Resist limitations. Influence of the resist on the liftoff quality of 10 nm Ti.

Figure 4

(a) PMMA495/MMA (150/250 nm), (b) PMMA950 (130 nm), (c) PMMA950:ZEP A (50 nm), (d) PMMA950:ZEP A (40 nm), (e) PMMA950:ZEP A (30 nm) and (f) PMMA950:ZEP A (15 nm). Influence of the exposure gaps in PMMA950:ZEP A (1:1.5) resist on the nanowire density; (g) 45 nm, (h) 30 nm and (i) 20 nm gaps.